| PART |
Description |
Maker |
| MC-4532CC726XF-A10 MC-4532CC726XF-A80 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| MR27V25603L-XXXTME MR27V25603L MR27V25603L-XXXTM |
16M-Word x 16-Bit or 32M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
| MR27T25603L-XXXTM MR27T25603L |
16M-Word x 16-Bit or 32M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| UPD23C32000ALGY-MJH UPD23C32000ALGY-MKH UPD23C3200 |
Circular Connector; No. of Contacts:3; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:8-98 RoHS Compliant: No
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
|
NEC Corp.
NEC, Corp.
|
| MR26V51203L-XXXMBE MR26V51203L MR26V51203L-XXXMB |
32M-Word x 16-Bit or 64M-Word x 8-Bit
|
OKI[OKI electronic componets]
|
| MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
From old datasheet system
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块)
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
|
OKI electronic componet...
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MB82DP02183D-65LWT |
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
